JPH031760B2 - - Google Patents

Info

Publication number
JPH031760B2
JPH031760B2 JP59038828A JP3882884A JPH031760B2 JP H031760 B2 JPH031760 B2 JP H031760B2 JP 59038828 A JP59038828 A JP 59038828A JP 3882884 A JP3882884 A JP 3882884A JP H031760 B2 JPH031760 B2 JP H031760B2
Authority
JP
Japan
Prior art keywords
transistor
memory cell
capacitor
section
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59038828A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60185295A (ja
Inventor
Hideki Arakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59038828A priority Critical patent/JPS60185295A/ja
Priority to US06/659,191 priority patent/US4630238A/en
Priority to EP91121355A priority patent/EP0481532B1/en
Priority to EP84306978A priority patent/EP0147019B1/en
Priority to DE3486418T priority patent/DE3486418T2/de
Priority to DE8484306978T priority patent/DE3486094T2/de
Publication of JPS60185295A publication Critical patent/JPS60185295A/ja
Publication of JPH031760B2 publication Critical patent/JPH031760B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP59038828A 1983-10-14 1984-03-02 不揮発性ランダムアクセスメモリ装置 Granted JPS60185295A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59038828A JPS60185295A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置
US06/659,191 US4630238A (en) 1983-10-14 1984-10-09 Semiconductor memory device
EP91121355A EP0481532B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device
EP84306978A EP0147019B1 (en) 1983-10-14 1984-10-12 Semiconductor memory device
DE3486418T DE3486418T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung
DE8484306978T DE3486094T2 (de) 1983-10-14 1984-10-12 Halbleiterspeicheranordnung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59038828A JPS60185295A (ja) 1984-03-02 1984-03-02 不揮発性ランダムアクセスメモリ装置

Publications (2)

Publication Number Publication Date
JPS60185295A JPS60185295A (ja) 1985-09-20
JPH031760B2 true JPH031760B2 (en]) 1991-01-11

Family

ID=12536090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59038828A Granted JPS60185295A (ja) 1983-10-14 1984-03-02 不揮発性ランダムアクセスメモリ装置

Country Status (1)

Country Link
JP (1) JPS60185295A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256296A (ja) * 1986-04-30 1987-11-07 Fujitsu Ltd 半導体不揮発性記憶装置

Also Published As

Publication number Publication date
JPS60185295A (ja) 1985-09-20

Similar Documents

Publication Publication Date Title
US5189641A (en) Non-volatile random access memory device
US4432072A (en) Non-volatile dynamic RAM cell
JP3431122B2 (ja) 半導体記憶装置
JPH057796B2 (en])
US4799193A (en) Semiconductor memory devices
EP0481532B1 (en) Semiconductor memory device
JPS6233672B2 (en])
EP0233453A1 (en) Associative memory cells
US4477886A (en) Sense/restore circuit for dynamic random access memory
JPH0154796B2 (en])
JPH031760B2 (en])
JPH031759B2 (en])
JPS58128090A (ja) ダイナミツクicメモリ
JPH0415556B2 (en])
JPS5935114B2 (ja) 増巾回路
JPS60258793A (ja) ダイナミック型半導体記憶装置
JPH0379800B2 (en])
JPH033315B2 (en])
JPH039559B2 (en])
JPH039560B2 (en])
JPH06203570A (ja) 半導体記憶装置
EP0295036B1 (en) Semiconductor memory device
JPS5864693A (ja) 半導体メモリセル
JPH0370877B2 (en])
JPS59221893A (ja) 不揮発性半導体メモリ